tzm5221b...tzm5267b vishay semiconductors rev. a3, 12-mar-01 1 (4) www.vishay.com document number 85609 silicon zdiodes features very sharp reverse characteristic very high stability electrical data identical with the devices 1n5221b...1n5267b low reverse current level v z tolerance 5% applications voltage stabilization 94 9371 order instruction type ordering code remarks tzm5221b tzm5221bgs08 tape and reel (2.500 pcs) tzm5221b tzm5221bgs18 tape and reel (10.000 pcs) absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit power dissipation r thja <300k/w, t amb =25 c p v 500 mw zcurrent i z p v /v z ma junction temperature t j 175 c storage temperature range t stg 65...+175 c maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction ambient on pc board 50 mmx50 mmx1.6 mm r thja 500 k/w electrical characteristics t j = 25 c parameter test conditions type symbol min typ max unit forward voltage i f =200ma v f 1.1 v
tzm5221b...tzm5267b vishay semiconductors rev. a3, 12-mar-01 2 (4) www.vishay.com document number 85609 type v znom 1) i zt for r zjt r zjk at i zk i r at v r tk vz v ma ma a v %/k tzm5221b 2.4 20 < 30 < 1200 0.25 < 100 1.0 < 0.085 tzm5222b 2.5 20 < 30 < 1250 0.25 < 100 1.0 < 0.085 tzm5223b 2.7 20 < 30 < 1300 0.25 < 75 1.0 < 0.080 tzm5224b 2.8 20 < 30 < 1400 0.25 < 75 1.0 < 0.080 tzm5225b 3.0 20 < 29 < 1600 0.25 < 50 1.0 < 0.075 tzm5226b 3.3 20 < 28 < 1600 0.25 < 25 1.0 < 0.070 tzm5227b 3.6 20 < 24 < 1700 0.25 < 15 1.0 < 0.065 tzm5228b 3.9 20 < 23 < 1900 0.25 < 10 1.0 < 0.060 tzm5229b 4.3 20 < 22 < 2000 0.25 < 5 1.0 < 0.055 tzm5230b 4.7 20 < 19 < 1900 0.25 < 5 2.0 < 0.030 tzm5231b 5.1 20 < 17 < 1600 0.25 < 5 2.0 < 0.030 tzm5232b 5.6 20 < 11 < 1600 0.25 < 5 3.0 < +0.038 tzm5233b 6.0 20 < 7 < 1600 0.25 < 5 3.5 < +0.038 tzm5234b 6.2 20 < 7 < 1000 0.25 < 5 4.0 < +0.045 tzm5235b 6.8 20 < 5 < 750 0.25 < 3 5.0 < +0.050 tzm5236b 7.5 20 < 6 < 500 0.25 < 3 6.0 < +0.058 tzm5237b 8.2 20 < 8 < 500 0.25 < 3 6.5 < +0.062 tzm5238b 8.7 20 < 8 < 600 0.25 < 3 6.5 < +0.065 tzm5239b 9.1 20 < 10 < 600 0.25 < 3 7.0 < +0.068 tzm5240b 10 20 < 17 < 600 0.25 < 3 8.0 < +0.075 tzm5241b 11 20 < 22 < 600 0.25 < 2 8.4 < +0.076 tzm5242b 12 20 < 30 < 600 0.25 < 1 9.1 < +0.077 tzm5243b 13 9.5 < 13 < 600 0.25 < 0.5 9.9 < +0.079 tzm5244b 14 9.0 < 15 < 600 0.25 < 0.1 10 < +0.082 tzm5245b 15 8.5 < 16 < 600 0.25 < 0.1 11 < +0.082 tzm5246b 16 7.8 < 17 < 600 0.25 < 0.1 12 < +0.083 tzm5247b 17 7.4 < 19 < 600 0.25 < 0.1 13 < +0.084 tzm5248b 18 7.0 < 21 < 600 0.25 < 0.1 14 < +0.085 tzm5249b 19 6.6 < 23 < 600 0.25 < 0.1 14 < +0.086 tzm5250b 20 6.2 < 25 < 600 0.25 < 0.1 15 < +0.086 tzm5251b 22 5.6 < 29 < 600 0.25 < 0.1 17 < +0.087 tzm5252b 24 5.2 < 33 < 600 0.25 < 0.1 18 < +0.088 tzm5253b 25 5.0 < 35 < 600 0.25 < 0.1 19 < +0.089 tzm5254b 27 4.6 < 41 < 600 0.25 < 0.1 21 < +0.090 tzm5255b 28 4.5 < 44 < 600 0.25 < 0.1 21 < +0.091 tzm5256b 30 4.2 < 49 < 600 0.25 < 0.1 23 < +0.091 tzm5257b 33 3.8 < 58 < 700 0.25 < 0.1 25 < +0.092 tzm5258b 36 3.4 < 70 < 700 0.25 < 0.1 27 < +0.093 tzm5259b 39 3.2 < 80 < 800 0.25 < 0.1 30 < +0.094 tzm5260b 43 3.0 < 93 < 900 0.25 < 0.1 33 < +0.095 tzm5261b 47 2.7 < 105 < 1000 0.25 < 0.1 36 < +0.095 tzm5262b 51 2.5 < 125 < 1100 0.25 < 0.1 39 < +0.096 tzm5263b 56 2.2 < 150 < 1300 0.25 < 0.1 43 < +0.096 tzm5264b 60 2.1 < 170 < 1400 0.25 < 0.1 46 < +0.097 tzm5265b 62 2.0 < 185 < 1400 0.25 < 0.1 47 < +0.097 tzm5266b 68 1.8 < 230 < 1600 0.25 < 0.1 52 < +0.097 tzm5267b 75 1.7 < 270 < 1700 0.25 < 0.1 56 < +0.098 1) based on dcmeasurement at thermal equilibrium; case temperature maintained at 30 c 2 c.
tzm5221b...tzm5267b vishay semiconductors rev. a3, 12-mar-01 3 (4) www.vishay.com document number 85609 dimensions in mm 96 12070
tzm5221b...tzm5267b vishay semiconductors rev. a3, 12-mar-01 4 (4) www.vishay.com document number 85609 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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